16 126 809 livres à l’intérieur 175 langues
2 047 052 livres numériques à l’intérieur 101 langues
Cela ne vous convient pas ? Aucun souci à se faire ! Vous pouvez renvoyer le produit dans les 30 jours
Impossible de faire fausse route avec un bon d’achat. Le destinataire du cadeau peut choisir ce qu'il veut parmi notre sélection.
Politique de retour sous 30 jours
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.