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Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature: Volume 512
English
125 b
Delivery to Austria
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Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete and up-to-date picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.
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