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Low Power and Reliable SRAM Memory Cell and Array Design

Language EnglishEnglish
Book Paperback
Book Low Power and Reliable SRAM Memory Cell and Array Design Koichiro Ishibashi
Libristo code: 02097985
Publishers Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, October 2013
The recent development of advanced semiconductor device technologies is due to the success of SRAM m... Full description
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The recent development of advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses issues in the design of SRAM memory cells for advanced CMOS technology, including variability, leakage and reliability.

About the book

Full name Low Power and Reliable SRAM Memory Cell and Array Design
Author Koichiro Ishibashi, Kenichi Osada
Language English
Binding Book - Paperback
Date of issue 2013
Number of pages 144
EAN 9783642270185
ISBN 3642270182
Libristo code 02097985
Publishers Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Weight 248
Dimensions 155 x 235 x 9

Categories

Technology, Engineering, Agriculture > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
Technology, Engineering, Agriculture > Technology: general issues > Engineering: general
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