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Low Power and Reliable SRAM Memory Cell and Array Design

Language EnglishEnglish
Book Hardback
Book Low Power and Reliable SRAM Memory Cell and Array Design Koichiro Ishibashi
Libristo code: 01657531
Publishers Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, August 2011
Success in the development of recent advanced semiconductor device technologies is due to the succes... Full description
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Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

About the book

Full name Low Power and Reliable SRAM Memory Cell and Array Design
Author Koichiro Ishibashi, Kenichi Osada
Language English
Binding Book - Hardback
Date of issue 2011
Number of pages 144
EAN 9783642195679
ISBN 3642195679
Libristo code 01657531
Publishers Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Weight 407
Dimensions 155 x 235 x 13

Categories

Technology, Engineering, Agriculture > Electronics & communications engineering > Electronics engineering > Electronic devices & materials
Technology, Engineering, Agriculture > Technology: general issues > Engineering: general
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